AP2N10,NMOS,SOT23

2023-12-01 09:48   839次浏览
价 格: 面议

Green Device Available

Super Low Gate ChargeExcellent Cdv/dt effect decline

Advanced high cell density Trenchtechnology

TheAP2N10 is the high cell density trenchedN-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small powerswitching and load switch applications.Themeet the RoHS and Green Productrequirement with full function reliability approved.

深圳市世微半导体有限公司

地址:广东省深圳市 宝安区宝源路名优工业产品展示采购中心B座2区326

联系:汤巧

手机:18923706103